All graphene computer chips designed in a research paper
For now, UCSB’s design is just that — a computer model that should
technically work, but which hasn’t been built yet. In theory, though,
with the worldwide efforts to improve high-quality graphene production
and patterning, we should be able to build an all-graphene IC in the
next few years. Even then, though, it will still take a long time to go
from laboratory prototype to full-scale commercial production — perhaps a
decade or more. For the time being, the higher electron mobility of
III-V semiconductors compared to silicon should provide a stopgap
solution for the continuing miniaturization and ultra-low-power
requirements of modern computing. When graphene ICs do finally take off,
though, we have terahertz switching speeds and transistor densities in
the tens-of-billions to look forward to.
Proposal for all-graphene monolithic logic circuits
ABSTRACT
Since the very inception of integrated circuits, dissimilar materials
have been used for fabricating devices and interconnects. Typically,
semiconductors are used for devices and metals are used for
interconnecting them. This, however, leads to a “contact resistance”
between them that degrades device and circuit performance, especially
for nanoscale technologies. This letter introduces and explores an
“all-graphene” device-interconnect co-design scheme, where a single
2-dimensional sheet of monolayer graphene is proposed to be
monolithically patterned to form both active devices (graphene
nanoribbon tunnel-field-effect-transistors) as well as interconnects in a
seamless manner. Thereby, the use of external contacts is alleviated,
resulting in substantial reduction in contact parasitics. Calculations
based on tight-binding theory and Non-Equilibrium Green's Function
(NEGF) formalism solved self-consistently with the Poisson's equation
are used to analyze the intricate properties of the proposed structure.
This constitutes the first NEGF simulation based demonstration that
devices and interconnects can be built using the “same starting
material” – graphene. Moreover, it is also shown that all-graphene
circuits can surpass the static performances of the 22 nm complementary
metal-oxide-semiconductor devices, including minimum operable supply
voltage, static noise margin, and power consumption.
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